Job Description
About Nexperia
Nexperia is a global company in the semiconductor industry. With over 15,000 people worldwide, we are active in an absolute future market. As a reliable partner, we work together with our customers from the automotive, industrial, consumer electronics or telecommunications technology sectors. We produce semiconductor components in large quantities at our own production sites
About the role:
The experienced candidate with suitable skills is required to carry out key tasks and to meet the deadline of the project. The successful candidate will work with a high-power chip technology development team to design and develop state-of-the-art technology and deliver world-class high-power chips on the market.
What you will do:
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Responsible for building a technology platform for power device (IGBT/FRD) design and new technology development to meet customer requirements in a manufacturable and cost-effective way
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Responsible for improving the device's overall performance for the existing products, in particular, improving the device's reliability and robustness
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Performing TCAD process and device simulations, and layout design
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Creating and maintaining design rules and generation rules when required using controlled procedures
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Responsible for engineering device tests (static, dynamic, reliability, etc) and data analysis, part of manual testing might be involved
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Responsible to guide and work with chip and other function teams to meet timely deliveries
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Train and advance the skills of existing technical employees to expand their capability and responsibility
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Experience of IGBT design for EV/HEV application preferred
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Encourage and manage the process of producing technical publications and invention patents
What you will need:
Hard Skills:
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Hand-on experience in power device design and technology development, fine geometry trench and thin wafer technology is necessary, 12” experience is a plus
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Proficiency in TCAD process and device simulation
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Understanding of power device physics, fabrication and characterization principles
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Knowledge and experience in design for reliability and robustness of power devices
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Ability to address design and engineering issues and to provide suitable solutions
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More than 8 years of working experience in IGBT (or FRD) design and/or processing
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Proficient in reading English literature and writing in English
Soft Skills:
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Leadership skills in building and leading project teams in a global, intercultural environment– “exemplified engagement”
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Master's degree or above, major in Microelectronics or semiconductor-related
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Good Communication skills in both oral and written English
Why work for us?
- Flexible working hours and possibility of overtime reduction to maintain a Work-Life-Balance
- Unlimited employment contract with a competitive salary and supplementary voluntary employee benefits
- A wide variety of training courses and career development options
- Numerous further benefits, such as retirement provisions, travel allowance for the HVV public transport ticket, company events, sports and leisure activities, employee discounts and even more